Energy transport in linear dielectrics.

نویسندگان

  • M Ware
  • S Glasgow
  • J Peatross
چکیده

We examine the energy exchanged between an electromagnetic pulse and a linear dielectric medium in which it propagates. While group velocity indicates the presence of field energy (the locus of which can move with arbitrary speed), the velocity of energy transport maintains strict luminality. This indicates that the medium treats the leading and trailing portions of the pulse differently. The principle of causality requires the medium to respond to the instantaneous spectrum, the spectrum of the pulse truncated at each new instant as a given locale in the medium experiences the pulse.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Temperature (5.6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO2/SiO2 and SiO2 MOS Gate Stacks

Temperature dependent measurements have been used to examine transport mechanisms and energy band structure in MOS devices. In this study, a comparison between high-k HfO2 dielectrics and conventional SiO2 dielectrics is made to investigate dielectric specific thermally activated mechanisms. Temperature dependent measurements on large area n/pMOSFETs composed of SiO2 and HfO2/SiO2 gate dielectr...

متن کامل

FORECASTING TRANSPORT ENERGY DEMAND IN IRAN USING META-HEURISTIC ALGORITHMS

This paper presents application of an improved Harmony Search (HS) technique and Charged System Search algorithm (CSS) to estimate transport energy demand in Iran, based on socio-economic indicators. The models are developed in two forms (exponential and linear) and applied to forecast transport energy demand in Iran. These models are developed to estimate the future energy demands based on pop...

متن کامل

Current-transport properties of atomic-layer-deposited ultrathin Al2O3 on GaAs

We report detailed current-transport studies of ultrathin Al2O3 dielectrics on GaAs grown by atomic layer deposition (ALD) as a function of film thickness, ambient temperature and electric field. The leakage current in ultrathin Al2O3 on GaAs is comparable to or even lower than that of the state-of-the-art SiO2 on Si, not counting on high dielectric constant for Al2O3. By measuring leakage curr...

متن کامل

EFFECT OF ELECTRIC FIELD ON PD ACTIVITY AND DAMAGE INTO SOLID DIELECTRIC MATERIALS

Abstract – In this paper, the effect of applied electric field on the damage due to partial discharges activity into the surroundings dielectrics of a narrow channel encapsulated within the volume of a dielectric material is evaluated using a kinetic model based on Particle in Cell - Monte Carlo Collision (PIC-MCC) model. After application of an electric field across a dielectric material which...

متن کامل

Problems in the theory of thermal Casimir force between dielectrics and semiconductors

The application of the Lifshitz theory to describe the thermal Casimir force between dielectrics and semiconductors is considered. It is shown that for all true dielectrics (i.e., for all materials having zero conductivity at zero temperature) the inclusion of a nonzero conductivity arising at nonzero temperature into the model of dielectric response leads to the violation of the Nernst heat th...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Optics express

دوره 9 10  شماره 

صفحات  -

تاریخ انتشار 2001